document number: 93458 for tec hnical questions, contact: indmodules@vishay.com www.vishay.com revision: 13-may-11 1 this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 insulated ultrafast rectifier module, 280 a vs-UFB280FA40 vishay semiconductors features ? two fully independent diodes ? fully insulated package ? ultrafast, soft reverse recovery, with high operation junction temperature (t j max. = 175 c) ? low forward voltage drop ? optimized for power conver sion: welding and industrial smps applications ? easy to use and parallel ? industry standard outline ? compliant to rohs directive 2002/95/ec ? designed and qualified for industrial level description the vs-UFB280FA40 insulated modules integrate two state of the art ultrafast recovery rectifiers in the compact, industry standard sot-227 package. the diodes structure, and its life time control, provide an ultrasoft recovery current shape, together with the best overall performance, ruggedness and reliability characteristics. these devices are thus intended for high frequency applications in which the switching energy is designed not to be predominant portion of the total energy, such as in the output rectification stage of welding machines, smps, dc/dc converters. their extremely optimized stored charge and low recovery current reduce both over dissipation in the switching elements (and snubbers) and emi/rfi. note (1) maximum continuous forward current must be limited to 100 a to do not exceed th e maximum temperature of power terminals. product summary v r 400 v i f(av) per module at t c = 90 c 280 a t rr 40 ns type modules - diode fred pt ? s ot-227 absolute maximum ratings parameter symbol test conditions max. units cathode to anode voltage v r 400 v continuous forward current per diode i f (1) t c = 90 c 170 a single pulse forwar d current per diode i fsm t c = 25 c 1300 maximum power dissip ation per module p d t c = 90 c 395 w rms isolation voltage v isol any terminal to case, t = 1 minute 2500 v operating junction and storage temperatures t j , t stg - 55 to 175 c
www.vishay.com for technical questions, contact: indmodules@vishay.com document number: 93458 2 revision: 13-may-11 this document is subject to change without notice. the products described herein and this document ar e subject to specific disclaimers, set forth at www.vishay.com/doc?91000 vs-UFB280FA40 vishay semiconductors insulated ultrafast re ctifier module, 280 a electrical specifications per diode (t j = 25 c unless otherwise specified) parameter symbol test conditio ns min. typ. max. units cathode to anode breakdown voltage v br i r = 100 a 400 - - v forward voltage v fm i f = 100 a - 1.06 1.24 i f = 100 a, t j = 175 c 0.85 - 0.95 reverse leakage current i rm v r = v r rated - 1.3 50 a t j = 175 c, v r = v r rated 0.36 - 4 ma junction capacitance c t v r = 400 v - 100 - pf dynamic recovery characteristics (t j = 25 c unless otherwise specified) parameter symbol test conditi ons min. typ. max. units reverse recovery time t rr i f = 1.0 a, di f /dt = 200 a/s, v r = 30 v - 40 - ns t j = 25 c i f = 150 a di f /dt = 200 a/s v r = 200 v -93- t j = 125 c - 172 - peak recovery current i rrm t j = 25 c - 10.5 - a t j = 125 c - 20.2 - reverse recovery charge q rr t j = 25 c - 490 - nc t j = 125 c - 1740 - thermal - mechanical specifications parameter symbol test condi tions min. typ. max. units junction to case, si ngle leg conducting r thjc - - 0.43 c/w junction to case, both leg conducting - - 0.215 case to heatsink r thcs flat, greased surface - 0.05 - weight -30- g mounting torque -1.3-nm case style sot-227
document number: 93458 for tec hnical questions, contact: indmodules@vishay.com www.vishay.com revision: 13-may-11 3 this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 vs-UFB280FA40 insulated ultrafast re ctifier module, 280 a vishay semiconductors fig. 1 - typical forward voltage drop characteristics (per leg) fig. 2 - typical values of reverse current vs. reverse voltage fig. 3 - typical junction capacitance vs. reverse voltage fig. 4 - maximum thermal impedance z thjc characteristics (per leg) 1 10 t j = 175 c t j = 25 c 0 v f - forward voltage drop (v) i f - instantaneous forward current (a) 100 1000 0.5 1.0 1.5 2.0 2.5 0.01 0.1 1 10 100 0 200 300 v r - reverse voltage (v) i r - reverse current (a) 400 100 0.001 1000 t j = 175 c t j = 25 c 1000 10 100 1000 10 v r - reverse voltage (v) c t - junction capacitance (pf) t j = 25 c 10 000 100 0.01 0.1 0.0001 0.001 0.01 0.1 1 t 1 - rectangular pulse duration (s) z thjc - thermal impedance (c/w) . . p dm t 1 t 2 notes: 1. duty factor d = t 1 /t 2 2. peak t j = p dm x z thjc + t c 1 single pulse (thermal resistance) dc 10
www.vishay.com for technical questions, contact: indmodules@vishay.com document number: 93458 4 revision: 13-may-11 this document is subject to change without notice. the products described herein and this document ar e subject to specific disclaimers, set forth at www.vishay.com/doc?91000 vs-UFB280FA40 vishay semiconductors insulated ultrafast re ctifier module, 280 a fig. 5 - maximum allowable case temperature vs. average forward current (per leg) fig. 6 - forward power loss characteristics (per leg) fig. 7 - typical reverse recovery time vs. di f /dt fig. 8 - typical stored charge vs. di f /dt note (1) formula used: t c = t j - (pd + pd rev ) x r thjc ; pd = forward power loss = i f(av) x v fm at (i f(av) /d) (see fig. 6); pd rev = inverse power loss = v r1 x i r (1 - d); i r at v r1 = 80 % rated v r 0 allowable case temperature (c) i f(av) - average forward current (a) 175 100 dc 75 40 120 280 25 50 80 160 125 150 200 240 0 square wave (d = 0.50) 80 % rated v r applied see note (1) 050 average power loss (w) i f(av) - average forward current (a) 0 dc 25 100 75 150 250 150 225 100 50 75 125 175 200 25 125 200 175 225 rms limit d = 0.20 d = 0.25 d = 0.33 d = 0.50 d = 0.75 100 1000 t rr (ns) di f /dt (a/s) 100 200 v r = 200 v t j = 125 c t j = 25 c 150 250 50 i f = 150 a i f = 75 a 100 1000 q rr (nc) di f /dt (a/s) 1000 5000 3500 v r = 200 v t j = 125 c t j = 25 c 2500 4000 0 500 1500 3000 2000 4500 i f = 150 a i f = 75 a
document number: 93458 for tec hnical questions, contact: indmodules@vishay.com www.vishay.com revision: 13-may-11 5 this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 vs-UFB280FA40 insulated ultrafast re ctifier module, 280 a vishay semiconductors fig. 9 - reverse recovery parameter test circuit fig. 10 - reverse recovery waveform and definitions irfp250 d.u.t. l = 70 h v r = 200 v 0.01 g d s di f /dt adju s t q rr 0.5 i rrm di (rec)m /dt 0.75 i rrm i rrm t rr t b t a i f di f /dt 0 (1) (2) (3) (4) (5) (1) di f /dt - rate of change of current through zero cro ss ing (2) i rrm - peak rever s e recovery current (3) t rr - rever s e recovery time mea s ured from zero cro ss ing point of negative going i f to point where a line pa ss ing through 0.75 i rrm and 0.50 i rrm extrapolated to zero current. (4) q rr - area under curve defined by t rr and i rrm t rr x i rrm 2 q rr = (5) di (rec)m /dt - peak rate of change of current during t b portion of t rr
www.vishay.com for technical questions, contact: indmodules@vishay.com document number: 93458 6 revision: 13-may-11 this document is subject to change without notice. the products described herein and this document ar e subject to specific disclaimers, set forth at www.vishay.com/doc?91000 vs-UFB280FA40 vishay semiconductors insulated ultrafast re ctifier module, 280 a ordering information table circuit configuration circuit circuit configuration code circuit drawing 2 separate diodes, parallel pin-out f links to related documents dimensions www.vishay.com/doc?95423 packaging information www.vishay.com/doc?95425 1 - vishay semiconductors product 2 - ultrafast rectifier 3 - ultrafast pt diffused 4 - current rating (280 = 280 a) 5 - circuit configuration (2 separate diodes, parallel pin-out) 6 - package indicator (sot-227 standard isolated base) - voltage rating (40 = 400 v) 7 device code 5 1 3 2 4 6 7 vs- uf b 280 f a 40 1 43 2 lead a ss ignment 1 4 2 3
document number: 95423 for tec hnical questions, contact: indmodules@vishay.com www.vishay.com revision: 15-nov-10 1 sot-227 generation ii outline dimensions vishay semiconductors dimensions in millimeters (inches) note ? controlling dime nsion: millimeter 38.30 (1.508) 37.80 (1.488) -a- 12.50 (0.492) 13.00 (0.512) 7.45 (0.293) 7.60 (0.299) ? 4.10 (0.161) ? 4.30 (0.169) 30.50 (1.200) 29.80 (1.173) 31.50 (1.240) 32.10 (1.264) 14.90 (0.587) 15.20 (0.598) 6.25 (0.246) 6.50 (0.256) 25.70 (1.012) 24.70 (0.972) 2.10 (0.083) 2.20 (0.087) -b- r full 2.20 (0.087) 1.90 (0.075) 8.30 (0.327) 7.70 (0.303) 4 x 4.10 (0.161) 4.50 (0.177) -c- 0.13 (0.005) 12.30 (0.484) 11.70 (0.460) 25.00 (0.984) 25.50 (1.004) m m m 0.25 (0.010) ca b 4 x m4 nuts
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